page 1 qw -bsc08 rev :a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. CDBJSC101200-G rohs device maximum rating (at t a =25c unless otherwise noted) reverse v oltage: 1200 v forward current: 10 a d im e n s io n s in in c h e s a n d ( m il li m e t e r ) parameter unit repetitive peak reverse voltage dc blocking voltage t ypical c ontinuous forward current non-repetitive peak forward surge current power dissipation t ypical thermal resistance operating junction temperature range sym bol v rrm v dc i f i fsm p tot r jc t j 1200 100 141.5 62 1.06 -55 ~ +175 v v a a w c/w c storage temperature range t stg -55 ~ +175 c v alue 1200 = 150c t c 10 repetitive peak forward surge current i frm 50 a conditions t c = 25c, tp = 10ms half sine wave, d = 0.3 t c = 25c, tp = 10ms half sine wave = 2 5 c t c t c = 1 10c junction to case surge peak reverse voltage v rsm 1200 v t o-220-2 0.052(1.32) 0.048(1.23) 0.173(4.40) 0.181(4.60) 0.512(13.00) 0.551(14.00) 0.620(15.75) 0.600(15.25) 0.155(3.93) 0.138(3.50) 0.116(2.95) 0.104(2.65) 0.152(3.85) 0.148(3.75) 0.028(0.70) 0.019(0.49) 0 .0 6 7 ( 1 .7 0 ) 0.0 35 (0. 88 ) 0.0 24 (0. 61 ) 0. 20 3( 5. 15 ) 0. 19 5( 4. 95 ) 0 .0 4 5 ( 1 .1 4 ) 0.646(16.40) max . 0.311(7.90) 0.303(7.70) 0.409(10.40) 0.394(10.00) 0.260(6.60) 0.244(6.20) 0.107(2.72) 0.094(2.40) circuit diagram k(1) a(2) k(3) features - rated to 1200v at 10 amps - short recovery time. - high speed switching possible. - t emperature independent switching behaviour . - high temperature operation. - high frequency operation. - positive . temperature coef ficient on vf silicon carbide power schottky diode
electrical characteristics (at t =25c unless otherwise noted) a parameter conditions symbol t yp max unit t ypical characteristics ( ) CDBJSC101200-G page 2 pf c t otal capacitance t otal capacitive charge forward voltage v r = 0v , t j = 25c , f = 1 mh z a v r = 800v , t j = 150c 1.7 100 v f i f = 10 a , t j = 25c i f = 10 a , t j = 175c v r = 1200v , t j = 25c v r = v , t j = 175c 1200 i r v nc 1.63 reverse current q c = c(v) dv vr 0 q c 2.55 780 50 100 69 qw -bsc08 rev :a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. silicon carbide power schottky diode c a p a c i t a n c e b e t w e e n t e r m i n a l s , c j ( p f ) reverse v oltage, v r (v) fig.4 - capacitance vs. reverse v oltage 200 400 500 1000 0 800 0.01 0.1 1 10 100 1000 fig.2 - reverse characteristics 100 300 600 700 900 case t empature, t c (c) f o r w a r d c u r r e n t , i f ( a ) fig.3 - current derating fig.1 - forward characteristics f o r w a r d c u r r e n t , i f ( a ) forward v oltage, v f (v) 0 2 10 2.0 0 1.5 3.0 0.5 6 8 1.0 2.5 4 t j =25c t j =75c t j =125c t j =175c r e v e r s e c u r r e n t , i r ( m a ) reverse v oltage, v r (v) 0 0.02 0.08 0 400 800 1600 0.04 0.06 200 600 1200 1000 1400 0.03 0.05 0.07 0.01 t=175c j t=125c j t j =25c t j =75c 150 175 75 125 100 60 50 10 0 50 100 25 40 30 20 70 90 80 10% duty 30% duty 50% duty 70% duty d.c.
silicon carbide power schottky diode page 3 qw -bsc08 rev :a comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. jsc101200 c part number jsc101200 marking code marking code CDBJSC101200-G marking code standard packaging c a s e t y p e t o - 2 2 0 - 2 5 0 t u b e ( p c s ) t u b e p a c k 1 , 0 0 0 b o x ( p c s )
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